Memory
NEO semiconductor introduces IGZO-based 3D X-DRAM with 1T1C and 3T0C cells for enhanced density and efficiency
NEO Semiconductor announces the latest advancement in its 3D X-DRAM technology family. The industry-first 1T1C- and 3T0C-based 3D X-DRAM cells represent a transformative solution designed to deliver unprecedented density, power efficiency, and scalability for the most demanding data applications.
3 min read
SRAM: Market and tech trends in AI semiconductor world
This 8 page Article provide the basic tech, advanced trends and ample market research and analysis information on this key component of semiconductors in this AI driven world.Static Random-Access Memory (SRAM) has been a cornerstone of high-performance computing for over six decades, valued f
18 min read
SK hynix validates 96GB CXL 2.0 DDR5, begins testing 128GB high-performance module
SK hynix announced the successful completion of customer validation for its 96GB Compute eXpress Link 2.0-based DDR5 DRAM solution. This milestone marks a significant advancement in high-performance computing, offering enhanced capacity and bandwidth for server systems.
2 min read
Cadence launches industry-first DDR5 12.8Gbps MRDIMM Gen2 memory IP system solution for AI and Data centers
Cadence announced the industry’s first DDR5 12.8Gbps MRDIMM Gen2 memory IP system solution on the TSMC N3 process. This solution addresses the increasing demand for greater memory bandwidth to support the unprecedented AI processing needs in enterprise and data center applications, includin
4 min read
Toshiba introduces 24TB N300 and N300 Pro HDDs for enhanced NAS and private cloud storage
Toshiba announced the expansion of its N300 and N300 Pro Series of internal hard disk drives with the introduction of new 24TB models. These new additions offer 2TB more capacity than the current 22TB versions, making them ideal for enhancing the storage capacity of network attached storage and p
2 min read
HBM4 standard released by JEDEC improving bandwidth, power efficiency, and capacity for AI and HPC
JEDEC published High Bandwidth Memory DRAM standard JESD270-4 HBM4 further enhancing data processing rates while maintaining essential features such as higher bandwidth, power efficiency, and increased capacity per die and/or stack. The advancements introduced by HBM4 are vital for appli
4 min read
Cadence introduces industry-leading 12.8Gbps HBM4 IP solution for next-gen AI and HPC systems
Cadence has announced the launch of the industry’s fastest HBM4 12.8Gbps memory IP solution, designed to meet the growing memory bandwidth demands of SoCs for next-generation AI training and HPC hardware systems. This new solution, compatible with the JEDEC specification JESD270-4, doubles
3 min read
Advanced development of PCIe 5.0-compatible broadband optical SSD for data centers
Kioxia and Kyocera announced the successful development of a prototype PCIe 5.0-compatible broadband SSD with an optical interface. This innovative broadband optical SSD is designed to meet the demands of advanced applications requiring high-speed data transfer, such as generative AI, and is set
3 min read
Synchronous SRAM with on-chip error-correcting code
Asynchronous SRAMs work at high-speed and low-power with on-chip ECC to suit automotive and industrial applications. Here are some of the latest Asynchronous SRAM chips with on-chip Error-Correcting Code (ECC) based on recent developments from leading manufacturers. These examples re
7 min read
SK hynix leads AI memory market with world's first 12-layer HBM4 DRAM
SK hynix started sampling world's first 12-layer HBM4 (High Bandwidth Memory) DRAM to its major customers. SK hynix calling it a significant milestone in AI memory technology, where it has delivered ahead of schedule, underscoring SK hynix's technological leadership and production expertise in th
2 min read
Global DRAM module revenue reached $12.5 billion in 2023, a decline of 28%
TrendForce reported that the global revenue for the DRAM module market reached US$12.5 billion in 2023—a YoY decline of 28%. This drop was primarily attributed to the inventory correction period for consumer electronics following the pandemic, which drove down DRAM prices. High utilization rates by
3 min read
SK hynix begun mass production of world’s first 12-layer HBM3E DRAM with 36GB1
SK hynix has begun mass production of the world’s first 12-layer HBM3E product with 36GB1, the largest capacity of existing HBM2 to date. Previously, the maximum capacity of HBM3E was 24GB from eight vertically stacked 3GB DRAM chips. HBM (High Bandwidth Memory): This high-value, high-performance
4 min read
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