SK hynix begun mass production of world’s first 12-layer HBM3E DRAM with 36GB1

SK hynix has begun mass production of the world’s first 12-layer HBM3E product with 36GB1, the largest capacity of existing HBM2 to date. Previously, the maximum capacity of HBM3E was 24GB from eight vertically stacked 3GB DRAM chips. HBM (High Bandwidth Memory): This high-value, high-performance memory vertically interconnects multiple DRAM chips and dramatically increases data processing speed in comparison to traditional DRAM products. HBM3E is the extended version of HBM3, the fourth generation product that succeeds the previous generations of HBM, HBM2 and HBM2E. The company plans to supply mass-produced products to customers within the year, proving its overwhelming technology once again six months after delivering the HBM3E 8-layer product to customers for the first time in the industry in March this year.
SK hynix Begins Volume Production of the World’s First 12-Layer HBM3E SK hynix is the only company in the world that has developed and supplied the entire HBM lineup from the first generation (HBM1) to the fifth generation (HBM3E), since releasing the world’s first HBM in 2013. The company plans to continue its leadership in the AI memory market, addressing the growing needs of AI companies by being the first in the industry to mass-produce the 12-layer HBM3E. According to...