Memory
Memory Chip Leader Micron Selects Bechtel for First Phase Construction of New York Semiconductor Fab in Clay
Micron Technology, Inc. and Bechtel announced that Micron has selected Bechtel as its partner for the engineering, procurement, and construction (EPC) of the first phase of its leading-edge memory manufacturing complex in Clay, New York. Bechtel will mobilize immediately at the White Pine
3 min read
Samsung Begins Shipping Industry-First HBM4E Samples for AI Memory Applications
Samsung Electronics has started shipping samples of its 12-layer HBM4E high-bandwidth memory to major global customers. The HBM4E follows the company’s earlier mass production and commercial shipment of HBM4 this year. It extends Samsung’s HBM roadmap to meet demands of AI comput
3 min read
SK hynix Launches iHBM Thermal Solution with Integrated Cooling Elements for Next-Generation HBM
SK hynix announced the launch of the iHBM solution that embeds integrated cooling elements (ICEs) within the high-bandwidth memory (HBM) package for next-generation HBM products. ICEs are cooling elements made of electrically non-conductive, thermally conductive silicon-based material desig
3 min read
Micron Begins 1α DRAM Manufacturing at Manassas Virginia Fab in $2 Billion Expansion
Micron Technology has started manufacturing of 1α (1-alpha) DRAM at its fab in Manassas, Virginia. The 1α DRAM is the most advanced memory ever produced in the United States. It supports American memory production for the automotive, defense and aerospace, industrial, networking and m
12 min read
NEO Semiconductor Reports 3D X-DRAM Proof-of-Concept Results and Secures Strategic Investment
NEO Semiconductor announced successful proof-of-concept (POC) results for its 3D X-DRAM technology on April 23, 2026. The POC test chips validate manufacturability using mature 3D NAND-based processes and meet key DRAM performance benchmarks. The company also announced a strategic investme
5 min read
Kioxia BG8 Series PCIe 5.0 Client SSDs Announced for Mainstream PCs with Up to 10,300 MB/s Reads
Kioxia Corporation today announced the KIOXIA BG8 Series solid state drives (SSDs), the next evolution of its client SSD lineup designed for PC OEM customers. The drives deliver PCIe 5.0 speed to the mainstream segment and are intended for slim laptops, commercial and consumer notebooks, and desk
3 min read
SK hynix Begins Mass Production of 192GB SOCAMM2 Memory Module for NVIDIA Vera Rubin AI Server Platform
SK hynix announced that it has begun mass production of the 192GB SOCAMM2, a next-generation memory module standard based on the 1cnm process (sixth-generation of the 10-nanometer technology) LPDDR5X low-power DRAM. SOCAMM2 is a module that adapts low-power memory which was previously used mainly
3 min read
India’s Surging Memory Semiconductor Demand: A Golden Opportunity for South Korea’s Samsung and SK Hynix?
As India’s digital economy and AI ambitions accelerate, its appetite for memory semiconductors such as DRAM, NAND flash, and especially high-bandwidth memory (HBM) for data centers and AI workloads is exploding. Industry observers note that the country’s projected memory demand growth
6 min read
Everspin Technologies Enters 10-Year Agreement with Microchip Technology to Expand Onshore MRAM Manufacturing Capacity
Everspin Technologies, developer and manufacturer of persistent Magnetoresistive Random Access Memory (MRAM) solutions, today announced a manufacturing agreement with Microchip Technology to expand production capacity. Everspin has entered into an initial 10-year agreement, that can be ext
3 min read
Toshiba Launches Sampling of 30-34 TB SMR Nearline HDDs in M12 Series for Hyperscale Data Centers
Toshiba announced the M12 Series of 3.5-inch nearline hard disk drives targeting hyperscale and cloud service providers in large-scale data centers. The M12 Series employs Shingled Magnetic Recording (SMR) technology to achieve storage capacities ranging from 30 to 34 TB. Sample shipments o
3 min read
Samsung and AMD Sign MOU for HBM4 Supply to Next-Generation Instinct MI455X GPU and DDR5 for EPYC Processors
Samsung Electronics and Advanced Micro Devices (AMD) signed a Memorandum of Understanding (MOU) on March 18, 2026, to expand their collaboration on AI memory and computing technologies. The signing took place at Samsung’s chip manufacturing complex in Pyeongtaek, South Korea, with AMD Chair
2 min read
PSMC Completes Tongluo Plant Sale to Micron, Launches HBM Foundry Collaboration and DRAM Process Upgrade
Powerchip Semiconductor Manufacturing Corp. (PSMC) announced completion of its $1.8 billion transaction to sell its P5 plant in Tongluo, Miaoli County, Taiwan, to Micron Technology. The deal, originally outlined in a letter of intent announced on January 17, 2026, transfers ownership of the facil
4 min read
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