Discrete
Vishay VEMD8083 3.2×2.0×0.6mm PIN Photodiode Targets Wearable Heart Rate and SpO2 Monitoring
Vishay Intertechnology has introduced the VEMD8083 high-speed silicon PIN photodiode in a 3.2 mm × 2.0 mm top-view surface-mount package with 0.6 mm profile. The VEMD8083 provides a radiant-sensitive area of 2.8 mm² and reverse light current of 11 µA at 525 nm, 14 µA
1 min read
Toshiba Launches 650V SiC MOSFETs in TOLL Package for Industrial Power Efficiency
Toshiba announced the release of three 650V third-generation silicon carbide (SiC) MOSFETs—TW027U65C, TW048U65C, and TW083U65C—in a surface-mount TOLL package. These devices, designed for industrial applications such as switched-mode power supplies, EV charging stations, photovo
3 min read
Magnachip Unveils 80V MXT MV MOSFET with TOLT Package for E-Scooters and LEVs in 2025
Magnachip Semiconductor has released a new 80V MXT MV MOSFET, model MDLT080N017RH, featuring a TOLT (TO-Leaded Top-Side Cooling) package. The company has started supplying this MOSFET to a major global electric motor manufacturer. The TOLT package is designed to release heat from the top t
2 min read
iDEAL Semiconductor’s SuperQ Technology Enters Production, Unveils 150 V and 200 V MOSFETs with Advanced Performance Metrics
iDEAL Semiconductor has launched its SuperQ technology into full production, introducing 150 V MOSFETs, with a 200 V MOSFET family currently in the sampling phase. This marks the first significant advancement in silicon MOSFET design in over 25 years, addressing limitations in switching and condu
3 min read
inergy Unveils New MOSFET Series with Advanced Trench Technology for AI Servers and High-Power Applications
Taiwan based inergy Technology has launched a new series of power MOSFETs with voltage ratings of 80V, 100V, and 150V, utilizing its proprietary Trench technology. The series is designed to deliver low on-resistance (RDS(ON)) and low gate charge (Qg), improving efficiency and reliability for AI s
2 min read
Renesas Introduces 650V Gen IV Plus GaN FETs for AI Data Centers, E-Mobility, and Industrial Applications
On July 1, 2025, Renesas Electronics Corporation announced three new 650V GaN FETs, the TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS, designed for AI data centers, server power supplies, 800V HVDC systems, e-mobility charging, UPS battery backup, battery energy storage, and solar inverters. Th
3 min read
ROHM Releases New 100V Power MOSFET for AI Servers and Industrial Applications
On July 1, 2025, ROHM introduced the RY7P250BM, a 100V power MOSFET designed for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection. The MOSFET, part of ROHM’s EcoMOS brand, is optimized for energy-efficient applications and
3 min read
Keys for Paralleling SiC MOSFETs
By David Kudelasek, Application Engineer, STMicroelectronics–Power & Energy Application Lab (Prague), STMicroelectronics.
21 min read
A 1970s India Based Power Semiconductor Company Leading now in Some of the Local Markets
Hind Rectifiers Ltd. (Hirect), established in 1958 in collaboration with Westinghouse Brake & Signal Co., U.K., specializes in the design, development, manufacturing, and marketing of power electronic equipment and railway transportation equipment. Initially incorporated as Hind Rectifiers Pr
2 min read
Alpha and Omega Semiconductor launches 25V MOSFET in DFN3.3x3.3 source-down packaging for AI servers
Alpha and Omega Semiconductor Limited (AOS) has introduced the AONK40202, a 25V MOSFET in DFN3.3x3.3 Source-Down packaging. The product is designed for high power density in DC-DC applications, addressing the needs of AI servers and data center power distribution.
2 min read
Mitsubishi Electric and GE Vernova sign MOU to collaborate on power semiconductors for HVDC systems
Mitsubishi Electric Corporation announced the signing of a memorandum of understanding (MOU) with GE Vernova, Inc., based in Cambridge, Massachusetts, USA, to enhance cooperation on power semiconductors for high-voltage direct-current (HVDC) transmission systems. The agreement stems from the &ldq
2 min read
EPC launches 40 V GaN power transistor for low-voltage applications
On May 6, 2025, Efficient Power Conversion (EPC) announced the release of the EPC2366, a 40 V, 0.8 mΩ gallium nitride (GaN) power transistor aimed at replacing low-voltage silicon MOSFETs in various applications. The device targets high-performance DC-DC converters, synchronous rectifiers,
2 min read
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