Toshiba Launches 650V SiC MOSFETs in TOLL Package for Industrial Power Efficiency

Toshiba  announced the release of three 650V third-generation silicon carbide (SiC) MOSFETs—TW027U65C, TW048U65C, and TW083U65C—in a surface-mount TOLL package. These devices, designed for industrial applications such as switched-mode power supplies, EV charging stations, photovoltaic inverters, and uninterruptible power supplies, began volume shipments today.

The TOLL package reduces device volume by over 80% compared to through-hole TO-247 and TO-247-4L(X) packages, supporting equipment miniaturization and automated assembly. It offers lower parasitic impedance, reducing switching losses. For the TW048U65C, turn-on loss is approximately 55% lower and turn-off loss is 25% lower compared to Toshiba’s equivalent TO-247-packaged 650V SiC MOSFETs without Kelvin connection. The four-terminal design includes a Kelvin connection for the gate drive signal source, minimizing inductance effects and enabling high-speed switching.

The MOSFETs feature optimized drift and channel resistance ratios for stable temperature dependence of drain-source on-resistance, low drain-source on-resistance × gate-drain charge, and a diode forward voltage of -1.35V (typical) at V...