On May 6, 2025, Efficient Power Conversion (EPC) announced the release of the EPC2366, a 40 V, 0.8 mΩ gallium nitride (GaN) power transistor aimed at replacing low-voltage silicon MOSFETs in various applications. The device targets high-performance DC-DC converters, synchronous rectifiers, and 24 V battery-powered motor drives, as well as high-density 48 V converters used in AI servers and datacom equipment.
The EPC2366 features an RDS(on) x QG figure of merit of 10 mΩ·nC, zero reverse recovery, and thermal performance that supports higher efficiency, faster switching, and increased power density. It is housed in a compact 3.3 mm x 2.6 mm PQFN package, enabling higher frequency operation and reduced system size in the specified applications.
Alex Lidow, CEO and co-founder of EPC, stated that the EPC2366, along with forthcoming lower voltage components, is part of the company’s effort to expand GaN technology into low-voltage applications traditionally dominated by silicon.
Engineering samples of the EPC2366 are currently available for qualified designs, and EPC encourages interested parties to contact them for application discussions.
