Compound Semiconductor
IISc Patented AlTiO/p-GaN Gate Stack Enables High-Threshold GaN Power Transistors for Commercial Scaling in EVs and Data Centers
Researchers at the Indian Institute of Science (IISc) have published findings from a two-part study on gallium nitride (GaN) power transistors, focusing on improving gate design to address limitations in threshold voltage and leakage current. GaN transistors can reduce energy losses and de
4 min read
onsemi and GlobalFoundries Collaborate on 650V GaN Power Devices for AI Data Centers and Electric Vehicles
onsemi announced a collaboration agreement with GlobalFoundries to develop and manufacture gallium nitride (GaN) power devices using GlobalFoundries' 200mm eMode GaN-on-silicon process, starting with 650V devices. The collaboration combines GlobalFoundries' GaN process technology with onse
3 min read
VisIC Technologies Raises $26M in Round B Funding for GaN EV Power Solutions with Hyundai and Kia Investment
VisIC Technologies has completed the second closing of its Round B funding, securing $26 million to develop Gallium Nitride (GaN) power semiconductor technology for electric vehicles. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia (referred to as HKMC) part
4 min read
onsemi Launches Vertical GaN Semiconductors Amid AI Surge and EV Boom
onsemi has introduced vertical gallium nitride (vGaN) power semiconductors, developed using GaN-on-GaN technology that conducts current vertically through the compound semiconductor. This architecture supports higher operating voltages and faster switching frequencies, targeting applications in A
3 min read
ROHM and Infineon Partner on SiC Power Semiconductor Packages to Boost Design Flexibility
ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on silicon carbide (SiC) power semiconductor packages for applications including on-board chargers, photovoltaics, energy storage systems, and AI data centers. The partnership focuses on enabling each compa
2 min read
Toshiba and BASiC Partner on SiC and IGBT Power Module Solutions for Automotive and Industrial Markets
Toshiba and BASiC Semiconductor signed a memorandum of understanding (MOU) on August 29, 2025 to establish a strategic partnership focused on power module products. The collaboration combines Toshiba’s silicon carbide (SiC) and insulated gate bipolar transistor (IGBT) technologies wit
2 min read
Navitas Semiconductor Appoints Chris Allexandre as CEO to Drive AI Data Center and Energy Infrastructure Growth
GaN and SiC device expert Navitas Semiconductor has named Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. Allexandre will also join the company’s Board of Directors, succeeding Gene Sheridan, a Navitas founder, who will step down as President, CEO, an
3 min read
Wolfspeed Names Bret Zahn as Automotive Business Lead Amid Electric Vehicle Market Growth
Wolfspeed has appointed Bret Zahn as Vice President and General Manager of its Automotive business, a move that aligns with the company’s strategic expansion in the electric vehicle (EV) market. Zahn, reporting to Chief Business Officer Cengiz Balkas, will be based at Wolfspeed’s head
2 min read
New 3D fabrication process integrates Gallium Nitride transistors onto silicon chips
Researchers from MIT and other institutions have developed a new method to integrate high-performance gallium nitride (GaN) transistors onto standard silicon CMOS chips. The process is low-cost, scalable, and compatible with existing semiconductor foundries, addressing the high cost and specializ
4 min read
Mitsubishi Electric develops compact 7GHz GaN power amplifier module for 5G-advanced
Mitsubishi Electric Corporation announced the development of a 7GHz band gallium nitride (GaN) power amplifier module
3 min read
Toshiba develops SiC trench MOSFET and semi-super-junction SBD technologies to reduce losses
Toshiba Electronic Devices & Storage Corporation announced on June 9, 2025, the development of two technologies for silicon carbide (SiC) power semiconductors aimed at reducing losses in high-efficiency power conversion applications, such as electric vehicles and renewable energy systems. The
3 min read
EPC launches 40 V GaN power transistor for low-voltage applications
On May 6, 2025, Efficient Power Conversion (EPC) announced the release of the EPC2366, a 40 V, 0.8 mΩ gallium nitride (GaN) power transistor aimed at replacing low-voltage silicon MOSFETs in various applications. The device targets high-performance DC-DC converters, synchronous rectifiers,
2 min read
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