Mitsubishi Electric Corporation announced the development of a 7GHz band gallium nitride (GaN) power amplifier module (PAM) for 5G-Advanced base stations, measuring 12.0mm x 8.0mm. The company verified its performance using 5G-Advanced communication signals. The module is designed to support the transition to 6G by addressing installation and power efficiency needs.
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The PAM uses proprietary matching-circuit technology, incorporating parasitic components of GaN transistors to reduce power-efficiency degradation. It achieves a power efficiency of 41% at 6.8–7.1GHz, with an output power of 37dBm, power gain of 25dB, and adjacent channel leakage ratio (ACLR) of -50dBc. The compact size facilitates high-density mounting in 5G-Advanced base stations, which use multi-element antennas for precise beam direction in high-frequency bands (6.425–7.125GHz), requiring smaller antenna spacing and reduced power consumption due to heat-related power loss.
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Mitsubishi Electric plans to continue research and development for practical application of the PAM in 5G-Advanced base stations starting in 2025. Technical details will be presented at the IEEE International Microwave Symposium 2025, held June 15–20 in San Francisco, CA, with a joint live demonstration with Wupatec at the event’s exhibition venue.
