onsemi announced a collaboration agreement with GlobalFoundries to develop and manufacture gallium nitride (GaN) power devices using GlobalFoundries' 200mm eMode GaN-on-silicon process, starting with 650V devices.
The collaboration combines GlobalFoundries' GaN process technology with onsemi's silicon drivers, controllers, and thermally enhanced packaging. The resulting products target applications in AI data centers, electric vehicles, renewable energy, industrial systems, and aerospace, defense, and security markets.
Applications include power supplies and DC-DC converters for AI data centers; onboard chargers and DC-DC converters for electric vehicles; solar microinverters and energy storage systems; and motor drives and DC-DC converters for industrial and aerospace, defense, and security uses.
Dinesh Ramanathan, Senior Vice President of Corporate Strategy at onsemi, stated that the collaboration pairs onsemi's system and product expertise with GlobalFoundries' GaN process to deliver 650V power devices. These devices, combined with silicon drivers and controllers, support power systems for AI data centers, electric vehicles, and space applications. Samples are scheduled for customers in the first half of 2026, with plans to scale to volume production.
Mike Hogan, Chief Business Officer at GlobalFoundries, stated that the partnership combines GlobalFoundries' 200mm GaN-on-Si platform and U.S.-based manufacturing with onsemi's expertise to provide solutions and supply chains for data centers, automotive, industrial, aerospace and defense markets.
The GaN devices support higher frequency operation, bidirectional capability, and integrated functionality with drivers, controllers, isolation, and protection in a single package.
onsemi's GaN portfolio now covers low, medium, and high voltage lateral GaN as well as ultra high-voltage vertical GaN. Sampling begins in the first half of 2026.
