onsemi Launches Vertical GaN Semiconductors Amid AI Surge and EV Boom

onsemi has introduced vertical gallium nitride (vGaN) power semiconductors, developed using GaN-on-GaN technology that conducts current vertically through the compound semiconductor. This architecture supports higher operating voltages and faster switching frequencies, targeting applications in AI data centers, electric vehicles, renewable energy, and aerospace, defense, and security.

The vGaN devices enable systems that are smaller and lighter while reducing energy losses by nearly 50%. Developed by onsemi’s research and development team in Syracuse, New York, the technology is covered by more than 130 patents related to fundamental processes, device architecture, manufacturing, and systems innovations. onsemi is currently sampling both 700V and 1,200V devices to early access customers, with wafers manufactured at its Syracuse facility.

The vertical design allows current to flow vertically through the chip, differing from most commercial GaN devices built on silicon or sapphire substrates. This results in higher power density, greater thermal stability, and performance under extreme conditions, surpassing GaN-on-silicon and GaN-on-sapphire in voltage capability, switching frequency, reliability, and ruggedness. Key benefits include handling higher voltages and currents in smaller footprints, cutting energy losses during power conversion to lower heat and...