Toshiba and BASiC Partner on SiC and IGBT Power Module Solutions for Automotive and Industrial Markets

Toshiba and BASiC Semiconductor signed a memorandum of understanding (MOU)  on August 29, 2025 to establish a strategic partnership focused on power module products. The collaboration combines Toshiba’s silicon carbide (SiC) and insulated gate bipolar transistor (IGBT) technologies with BASiC’s module architecture to develop products for automotive and industrial applications, including electric vehicles, solar power generation, and storage systems.

Toshiba’s SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) feature low on-resistance and high reliability, while its IGBTs support high current and reliability. BASiC specializes in SiC chips and power modules, with products meeting automotive and industrial standards. The partnership aims to enhance market competitiveness and deliver solutions that improve power conversion efficiency and reduce environmental impact.

Toshiba Electronic Devices & Storage and BASiC, along with BASiC’s affiliate Bronze Technologies Ltd., will jointly exhibit at PCIM Asia Shanghai 2025, held from September 24 to 26, 2025, in Shanghai. The companies plan to explore further cooperation to support business growth and contribute to sustainability.