ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on silicon carbide (SiC) power semiconductor packages for applications including on-board chargers, photovoltaics, energy storage systems, and AI data centers. The partnership focuses on enabling each company as a second source for selected SiC packages, enhancing design and procurement flexibility for customers. This allows customers to source compatible housings from both ROHM and Infineon, ensuring interchangeability to meet specific needs.
As part of the agreement, ROHM will adopt Infineon’s top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. This platform standardizes package height at 2.3 mm, simplifies cooling designs, reduces system costs, improves board space utilization, and increases power density by up to two times. Infineon will incorporate ROHM’s DOT-247 package with SiC half-bridge configuration, expanding its Double TO-247 IGBT portfolio to include SiC solutions. The DOT-247 package integrates two TO-247 packages, reducing thermal resistance by approximately 15% and inductance by 50% compared to standard TO-247, achieving 2.3 times higher power density.
The collaboration plans to extend to additional packages, including silicon and wide-bandgap technologies like SiC and gallium nitride (GaN), to broaden customer solutions and sourcing options. SiC semiconductors enable efficient switching, high reliability, and compact designs, supporting energy-efficient applications in electric vehicle charging, renewable energy systems, and AI data centers.
