Mitsubishi Electric and GE Vernova sign MOU to collaborate on power semiconductors for HVDC systems

Mitsubishi Electric Corporation announced the signing of a memorandum of understanding (MOU) with GE Vernova, Inc., based in Cambridge, Massachusetts, USA, to enhance cooperation on power semiconductors for high-voltage direct-current (HVDC) transmission systems. The agreement stems from the “Japan-US focus group to enhance collaboration on energy security and supply chain,” initiated by Japan’s Ministry of Economy, Trade and Industry (METI) and GE Vernova to foster corporate collaboration between the two nations.
The global demand for HVDC transmission systems is rising due to their ability to transmit large amounts of electricity over long distances more stably and efficiently than alternating current (AC) systems, particularly for renewable energy sources like wind and solar. Voltage source converter (VSC) HVDC systems support grid stabilization and long-distance transmission for unstable renewable energy sources, with the market for these systems expanding rapidly. Mitsubishi Electric holds the largest global market share in power semiconductors for VSC HVDC systems and is developing insulated gate bipolar transistors (IGBTs) with high reliability, high voltage resistance, and large current capacity. The company plans to increase production capacity to meet market demand.
Under the MOU, Mitsubishi Electric will supply IGBT power semiconductors for GE Vernova’s VSC HVDC systems. The collaboration aims to combine the technical and strategic expertise of both companies to address growing electricity demand and support power grid evolution.