iDEAL Semiconductor’s SuperQ Technology Enters Production, Unveils 150 V and 200 V MOSFETs with Advanced Performance Metrics

iDEAL Semiconductor has launched its SuperQ technology into full production, introducing 150 V MOSFETs, with a 200 V MOSFET family currently in the sampling phase. This marks the first significant advancement in silicon MOSFET design in over 25 years, addressing limitations in switching and conduction performance.

The SuperQ architecture achieves up to a 95% n-conduction region and reduces switching losses by up to 2.1 times compared to competing devices. The initial 150 V MOSFET, iS15M7R1S1C, is a 6.4 mΩ device available in a 5 x 6 mm PDFN surface-mount technology (SMT) package with exposed leads to enhance assembly and board-level reliability. This structure also improves resistance and power losses while maintaining silicon’s ruggedness, high-volume manufacturability, and reliability at a 175°C junction rating.

The 200 V MOSFET family includes the iS20M6R1S1T, a 6.1 mΩ device in an 11.5 x 9.7 mm TOLL package, offering a 10% lower RDSon than the current industry leader and 36% lower than the next closest competitor. Sampling is underway for 200 V MOSFETs in TOLL, TO-220, D2PAK-7L, and PDFN packages. iDEAL plans to introduce 300 V and 400 V MOSFET platforms soon, targeting voltage classes underserved by existing silicon technologies to enhance efficiency and performance.

Mark Granahan, CEO and co-founder of iDEAL Semiconductor, not...