inergy Unveils New MOSFET Series with Advanced Trench Technology for AI Servers and High-Power Applications

Taiwan based inergy Technology has launched a new series of power MOSFETs with voltage ratings of 80V, 100V, and 150V, utilizing its proprietary Trench technology. The series is designed to deliver low on-resistance (RDS(ON)) and low gate charge (Qg), improving efficiency and reliability for AI servers and other high-power applications.

The lineup includes the 80V iMN007N08T with an RDS(ON) of 0.7mΩ (typical at 10V), the 100V iMN009N10T and iMN01N10T with RDS(ON) values of 1.05mΩ and 1.2mΩ (typical at 10V) respectively, and the 150V iMN035N15T with an RDS(ON) of 3.2mΩ (typical at 10V). These specifications aim to minimize power losses and enhance system-level energy efficiency.

All MOSFETs in this series are housed in a TO-Leadless (TOLL) package, a compact surface-mount design that supports high power density through improved thermal performance, reliability, and space efficiency.

The series targets applications such as server and data center power supplies, telecom base stations, battery management systems (BMS), 48V battery switching, and electric two/three-wheel vehicles. inergy Technology states that these products are intended to support the development of compact, reliable, and high-perfor...