Discrete

ROHM introduces cutting-edge low ON-resistance power MOSFETs for enhanced efficiency in enterprise and AI servers

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ROHM  announce the development of industry-leading N-channel power MOSFETs featuring exceptionally low ON-resistance and wide Safe Operating Area  capability. These advanced MOSFETs are designed to meet the demanding requirements of power supplies in high-performance enterprise and AI servers.
As data processing technologies advance and digital transformation accelerates, the demand for data center servers continues to grow. Servers equipped with advanced computing capabilities for AI processing are increasingly prevalent and operate continuously, 24/7. The conduction losses caused by the ON-resistance of multiple MOSFETs in the power block significantly impact system performance and energy efficiency, particularly in AC-DC conversion circuits. This drives the need for MOSFETs with low ON-resistance.
Additionally, servers with a standard hot-swap function, which allows for the replacement and maintenance of internal boards and storage devices while powered ON, experience high inrush currents during component exchanges. To protect server components and MOSFETs from damage, a wide SOA tolerance is essential.

To address these challenges, ROHM has developed the new DFN5060-8S package, which supports the packaging of a larger die compared to conventional designs. This results in a lineup of power MOSFETs that achieve industry-leading low ON-resistance and wide SOA capability, significantly improving efficiency and enhancing reliability in server power circuits.
Product Lineup: The new lineup includes three products: RS7E200BG (30V), RS7N200BH (80V), and RS7N160BH (80V). These MOSFETs are optimized for secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V and 48V power supplies used in high-performance enterprise and AI servers.

DFN5060-8S Package: The newly developed DFN5060-8S package (5.0mm × 6.0mm) increases the internal die size area by approximately 65% compared to the conventional HSOP8 package. This allows the RS7E200BG (30V) and RS7N200BH (80V) to achieve ON-resistances of 0.53mΩ and 1.7mΩ (at VGS = 10V), respectively, ranking among the best in the industry for their class.
Enhanced SOA Tolerance: The RS7E200BG (30V) achieves an SOA tolerance of over 70A at a pulse width of 1ms and VDS = 12V, which is twice that of conventional HSOP8 package MOSFETs under the same conditions. This ensures industry-leading SOA performance in a 5.0mm × 6.0mm footprint.
Technological Advancements: ROHM has optimized the internal clip design to enhance heat dissipation, further improving SOA tolerance and ensuring reliable performance even under demanding conditions. These advancements significantly enhance the secret key rate and overall efficiency of CV-QKD systems, paving the way for secure communication in the quantum era.
 
For more information, please visit https://www.rohm.com

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