onsemi introduced the first generation of its 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET) based SPM 31 intelligent power modules (IPMs). Onsemi EliteSiC SPM 31 IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to using Field Stop 7 IGBT technology, resulting in lower total system cost than any other leading solution on the market. Their improved thermal performance, reduced power losses and ability to support fast switching speeds makes these IPMs ideally suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI data centers, heat pumps, commercial HVAC systems, servo motors, robotics, variable frequency drives (VFDs), and industrial pumps and fans.
The EliteSiC SPM 31 IPMs offer several current ratings from 40A to 70A.
Why It Matters:
In 2023, operations of residential and commercial buildings accounted for 27.6% of U.S. end-use energy consumption. As electrification and AI adoption grow, particularly with the construction of more AI data centers increasing energy demands, the need to reduce the energy consumption of applications in this sector is becoming more critical. Power semiconductors capable of efficiently converting electric power are the key in this transition to a low-carbon-emissions world.
With the number and size of data centers growing, the demand for EC fans is expected to rise. These cooling fans maintain the ideal operating environment for all equipment in a data center and are essential for accurate, error-free data transmission. The SiC IPM ensures the EC fan operates reliably and at its highest efficiency.
How It Works:
The fully integrated EliteSiC SPM 31 IPM consists of an independent high side gate driver, low voltage integrated circuit , six EliteSiC MOSFETs and a temperature sensor. The module is based on the industry-leading M3 SiC technology that shrinks die size and is optimized for hard-switching applications with improved short-circuit withstand time performance when used in the SPM 31 package, making them suitable for inverter motor drives for industrial use. The MOSFETs are configured in a three-phase bridge with separate source connections for the lower legs for maximum flexibility in the choice of control algorithm.
In addition, the EliteSiC SPM 31 IPMs include the following benefits:
Low loss, short-circuit-rated M3 EliteSiC MOSFETs to prevent catastrophic equipment and component failures such as electric shock or fire.
Built-in under-voltage protection (UVP) to protect against damage to the device when voltage is low.
UL certified to meet national and international safety standards
Single-grounded power supply offering better safety, equipment protection and noise reduction.
Learn more about onsemi at www.onsemi.com.
