NoMIS Power, a maker SiC MOSFETs and power modules able to solve one of the key challenge limiting the widespread adoption of SiC technology in high-power applications. NoMIS improved the short-circuit withstand time (SCWT) of SiC MOSFETs enhancing the reliability of these devices .
NoMIS Power’s latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs (Fig. 1), compared to the current industry standard of 2-3 µs, with no deleterious effect on specific on-resistance (Ron,sp) (Fig 2 below).
Figure 1: Drain currents of the NoMIS Power SiC MOSFET and NoMIS Power SiC MOSFET with long SCWT under short-circuit conditions right before failure. Drain currents of the 1.2 kV, 80 mΩ SiC MOSFET (dark blue) and the long SCWT 1.2 kV, 80 mΩ SiC MOSFET (light blue) from NoMIS Power are compared. The measurement for short-circuit was conducted under the following conditions: Rg of 20 Ω, Vgs of 20 V, and a Vds of 800 V.
By tuning the trade-off between Ron,sp and SCWT using NoMIS Power’s proprietary SiC MOSFET fabrication design and process flow, the performance shown in Fig. 1 & Fig. 2 was achieved; and can be similarly managed depending on the specific application. Complete optimization of SiC MOSFETs with long SCWT using this approach will allow NoMIS Power to further extend the SCWT while maintaining negligible impact on Ron,sp.
Figure 2: Typical output characteristics of NoMIS Power 1.2 kV, 80 mQ SiC MOSFET and NoMIS Power 1.2 kV, 80 mQ SiC MOSFET with long SCWT showing no significant negative impact on on-resistance.
“At NoMIS Power, we have focused extensively on device architecture engineering, leading to a significant advancement in SiC short-circuit withstand time,” said Woongje Sung, CTO at NoMIS Power. “We believe this achievement provides valuable advantages to the power electronics community, helping engineers integrate SiC solutions with greater confidence in applications where robustness is critical.”
