Nuvoton Technology Corporation Japan (NTCJ) announced on January 20, 2026, the commencement of mass production for its high-power ultraviolet semiconductor laser. The device operates at a wavelength of 379 nm and delivers an optical output of 1.0 W in continuous-wave mode. It is housed in a 9.0-mm diameter TO-9 CAN package. According to NTCJ, as of January 16, 2026, this represents the leading optical output for semiconductor lasers at 379 nm in a TO-9 package under continuous-wave operation at a case temperature of 25°C, based on the company's research.
The laser combines a short wavelength, high output power, and extended lifetime characteristics described as challenging for ultraviolet semiconductor lasers—through NTCJ's proprietary device structure and high-heat-dissipation packaging technology.
This development addresses demands in maskless lithography for advanced semiconductor packaging, where shorter wavelengths near the i-line (365 nm) and higher output enable finer patterning and increased production throughput.
Growing requirements for semiconductor performance, driven by artificial intelligence advancements, have shifted focus to back-end packaging technologies. These include arranging or stacking multiple chips, as transistor miniaturization faces physical and economic constraints.
Ultraviolet semiconductor lasers typically encounter issues with heat generation due to low wall-plug efficiency and device degradation from ultraviolet exposure, complicating stable high-output operation above 1.0 W. NTCJ addressed these through improvements in wall-plug efficiency via device structure and enhanced thermal conduction in the package.
The product forms part of NTCJ's lineup of semiconductor laser alternatives to mercury lamps.
Details will be displayed at NTCJ's booth during SPIE Photonics West 2026 in San Francisco, USA, and OPIE'26 in Yokohama, Japan.
