KIOXIA America, Inc. has started sampling Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, designed for next-generation mobile applications, including advanced smartphones with on-device AI. The devices integrate KIOXIA’s 8th generation BiCS FLASH 3D flash memory and a controller in a JEDEC-standard BGA package, utilizing CMOS directly Bonded to Array (CBA) technology to improve power efficiency, performance, and density.
Available in 256 GB, 512 GB, and 1 TB capacities, the UFS Ver. 4.1 devices deliver performance improvements over the previous generation: random writes increase by approximately 30% for 512 GB and 1 TB models, random reads improve by about 45% for 512 GB and 35% for 1 TB, power efficiency for reads rises by around 15%, and writes improve by approximately 20%. Additional features include Host Initiated Defragmentation for uninterrupted performance, WriteBooster buffer resizing for optimized performance, and a reduced package height for the 1 TB model compared to the prior generation.
Maitry Dholakia, vice president of KIOXIA America’s Memory Business Unit, stated that the UFS Ver. 4.1 devices support faster and more efficient experiences for next-generation devices, meeting the performance and efficiency needs of modern mobile and computing platforms.
