Diodes announced the expansion of its silicon carbide product portfolio with the introduction of five high-performance, low figure-of-merit 650V SiC Schottky diodes. The new DSCxxA065LP series, available in 4A, 6A, 8A, 10A, and 12A ratings, is designed to deliver exceptional efficiency in power switching applications, including DC to DC and AC to DC conversion, renewable energy systems, data centers, and industrial motor drives.
The DSCxxA065LP series boasts an industry-leading FOM, calculated as FOM = QC × VF, which is achieved through negligible switching losses due to the absence of reverse recovery current and low capacitive charge , combined with a low forward voltage that minimizes conduction losses. These features make the diodes ideal for high-speed switching circuits, enhancing overall power efficiency.
Additionally, the SiC diodes exhibit the lowest reverse leakage in the industry, at a maximum of 20µA. This significantly reduces heat dissipation and conduction losses, improving system stability and reliability compared to traditional silicon Schottky devices. The reduction in heat dissipation also translates to lower cooling costs and operating expenses.
The DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package, which features a large underside heat pad to reduce thermal resistance. This compact and low-profile surface mount package, measuring approximately 8mm x 8mm x 1mm, requires less board space and provides a larger heat pad, making it an ideal alternative to the TO252 (DPAK). This design increases power density, reduces overall solution size, and lowers the cooling budget.
For more information, visit www.diodes.com.
