EPC Space, a manufacturer of radiation-hardened, high-performance, enhanced-reliability GaN discrete transistors, integrated circuits, and modular devices, has announced three new eGaN® power transistors in plastic surface-mount packages, built to deliver high-performance power conversion for next-generation space computing systems.
The EPC7050PCSH, EPC7066PCSH, and EPC7065PCSH combine ultra-low on-resistance, high current capability, and fast switching performance in compact PQFN packages with backside thermal pads. Their low conduction losses and strong switching figures of merit support high efficiency and power density, all while maintaining zero reverse-recovery charge. Together, these characteristics enable smaller, more efficient power conversion solutions suited to space-constrained system architectures. All three devices offer strong radiation immunity, with total ionizing dose (TID) above 1 Mrad, single-event effect linear energy transfer (SEE LET) of 85 MeV·cm²/mg in silicon, and neutron tolerance above 4E15 n/cm².
The EPC7050PCSH is a 15V device rated for 101A of continuous current with a typical RDS(on) of 0.28 mΩ. The EPC7066PCSH is rated at 25V and 101A, with a typical RDS(on) of 0.37 mΩ, while the EPC7065PCSH offers a 40V rating with 101A continuous current capability and a typical RDS(on) of 0.5 mΩ.
All three devices are designed for synchronous rectifier applications on the secondary side of intermediate bus converters with output ranges of 5V to 12V, offering an industry-leading low RDS(on) × QG figure of merit to support higher-frequency, higher-efficiency operation. The devices are also intended for point-of-load buck converters and integrated voltage regulators (IVRs) supplying 0.8V core voltage to processors.
Bel Lazar, CEO of EPC Space, said these devices target voltage regulator module (VRM), intermediate voltage regulation (IVR), point-of-load (POL), and intermediate bus converter (IBC) applications used to power space computing assets such as the Versal SoC or NVIDIA GPUs. He said the devices demonstrate strong radiation hardness, including TID immunity and resilience to neutron and single-event effects, while offering electrical performance that exceeds the best silicon MOSFETs currently used on the ground.
As AI and high-performance computing extend into space applications, delivering reliable power to increasingly demanding processors and accelerators is becoming a critical part of system design. EPC Space's latest eGaN devices are intended to address this challenge by combining radiation robustness with the electrical performance and power density required for next-generation space compute platforms.
For quantities of 500 units, engineering models are priced at $85, while Rad Hard space-qualified units are priced at $125.
