Power Integrations showcases first 2200V GaN technology in the world
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Power Integrations has announced that its PowiGaN gallium-nitride (GaN) technology is now rated up to 2200 V, exceeding the voltage capability of every other commercially available GaN technology. GaN is a semiconductor material increasingly used in place of traditional silicon in power conversion because it allows for higher efficiency and faster switching, and Power Integrations is positioning this higher voltage rating as a way to support high-voltage data centers, electric vehicles, renewable energy systems, and high-voltage direct current (HVDC) infrastructure, all of which are moving toward higher-voltage bus architectures in pursuit of greater power density.
Jennifer Lloyd, president and CEO of Power Integrations, said the 2200V PowiGaN technology gives substantial voltage headroom for emerging high-voltage power systems while still supporting the high switching frequencies needed to maximize power density. She pointed to next-generation AI data centers as a key emerging application, noting that industry roadmaps are pointing toward 1500V distribution architectures, along with future EV battery and auxiliary power systems that are moving toward higher output voltages around 48V. She described this as a milestone that extends GaN's reach into voltage ranges that have traditionally been handled by silicon carbide (SiC), positioning it as a...
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