onsemi has expanded its collaboration with Schaeffler, a motion technology company, through a new design win featuring onsemi’s next-generation EliteSiC silicon carbide MOSFETs. The technology will power Schaeffler’s traction inverter for a plug-in hybrid electric vehicle (PHEV) platform developed for a leading global automaker.
The EliteSiC solution provides lower conduction losses and improved short-circuit robustness, enabling a compact and thermally efficient inverter design. Compared to other silicon carbide solutions, it offers the lowest on-state resistance, delivering the highest peak power in its class. This results in a traction inverter system that provides longer driving range through higher energy conversion efficiency, enhanced reliability for consistent operation with reduced maintenance, and an optimized form factor for greater vehicle design flexibility.
Christopher Breitsameter, Head of Business Division Controls at Schaeffler, stated that the traction inverter is central to electrified drivetrains, and onsemi’s EliteSiC technology supports the efficiency and performance required by their customer. As automakers focus on energy efficiency, the industry is shifting toward advanced hybrid architectures, even in cost-sensitive EV platforms traditionally using insulated-gate bipolar transistors (IGBTs). onsemi’s silicon carbide technology supports Schaeffler in meeting stringent performance and packaging requirements.
Simon Keeton, Group President of onsemi’s Power Solutions Group, noted that as the exclusive silicon carbide supplier for this program, onsemi strengthens its role as a key partner for automotive players. The technology provides efficiency, thermal performance, and power density for next-generation electric powertrain systems in both battery electric vehicles and PHEVs.
This development builds on a multi-year collaboration between onsemi and Schaeffler, previously Vitesco Technologies, to deliver high-efficiency electric mobility solutions.
