Incize, a Belgian semiconductor characterization and modeling company, and Atomera, a Nasdaq-listed advanced semiconductor materials firm, have announced a partnership to enhance Gallium Nitride on Silicon (GaN-on-Si) technologies. The collaboration aims to address the performance limitations of traditional silicon by combining GaN’s high-performance capabilities with silicon’s manufacturability, targeting applications in wireless infrastructure (5G/6G), satellite communications, and advanced power electronics.
The partnership integrates Atomera’s Mears Silicon Technology (MST), a quantum-engineered ultra-thin silicon film that improves transistor performance, energy efficiency, and reliability, with Incize’s advanced characterization platforms. These platforms analyze substrate trap effects, noise, linearity, thermal performance, and RF capabilities from DC to mmWave. The joint effort focuses on optimizing GaN-on-Si device performance for high-frequency and high-power applications.
Key objectives include improving interface quality between GaN layers and silicon substrates, reducing parasitic effects and substrate losses, minimizing trap-induced noise and leakage, and enhancing linearity and RF power handling. Dr. Mostafa Emam, CEO of Incize, highlighted the potential of combining their RF technology enablement with Atomera’s MST to improve GaN-on-Si performance, efficiency, and reliability. Scott Bibaud, CEO of Atomera, emphasized Incize’s expertise in GaN-on-Si and measurement capabilities as critical to advancing compound semiconductor devices. Dr. Robert Mears, Atomera’s founder and CTO, noted the opportunity to explore MST® applications beyond conventional silicon in the evolving GaN-on-Si field.
This collaboration represents a significant step in integrating material innovation with device-level performance in the semiconductor industry.
