STMicroelectronics have announced a Joint Development Agreement with Innoscience to enhance GaN power solutions and strengthen supply chain resilience.
Joint Development Initiative: The collaboration focuses on advancing GaN power technology for applications in consumer electronics, datacenters, automotive, and industrial power systems.
Manufacturing Synergy: Innoscience will utilize ST’s front-end manufacturing capacity in Europe, while ST will leverage Innoscience’s capacity in China, ensuring flexible and resilient supply chains.
Technological Advancements: The partnership aims to accelerate the adoption of GaN technology, offering improved efficiency, smaller size, and reduced carbon footprint for power electronics.
Marco Cassis, President of Analog, Power & Discrete, MEMS and Sensors at STMicroelectronics, stated, “This agreement allows ST to accelerate its GaN power technology roadmap, complementing our silicon and silicon carbide offerings. By leveraging a flexible manufacturing model.”
Dr. Weiwei Luo, Chairman and Founder of Innoscience, added, “GaN technology is crucial for creating smaller, more efficient systems that save power, lower costs, and reduce CO2 emissions. Our collaboration with ST will further expand and accelerate the adoption of GaN technology, benefiting multiple markets.”
GaN power devices leverage fundamental material properties that enable new standards of system performance in power conversion, motion control, and actuation, offering significantly lower losses, which allows for enhanced efficiency, smaller size, and lighter weight, thus reducing the overall solution cost and carbon footprint; these devices are rapidly being adopted in consumer electronics, data center and industrial power supplies, and solar inverters, and are being actively designed into next-generation EV powertrains due to their substantial size and weight reduction benefits.
