The Global Electronics Association and Accuris have released research on how silicon carbide (SiC) and gallium nitride (GaN) power devices are affecting electronics design, manufacturing and supply-chain planning. The research examines adoption in products and infrastructure requiring greater energy efficiency, compact designs and reliable power performance.
The report covers electric vehicles, renewable-energy systems, AI data centers, communications infrastructure and consumer electronics. Drawing on data from the Accuris Parts Database and manufacturing insight, it examines how SiC and GaN are changing product development, sourcing and printed circuit board requirements.
The research says SiC and GaN are not interchangeable. SiC is gaining traction in high-voltage, high-power applications, while GaN is increasingly used where high switching speed and compact power conversion are especially important. The report says organizations must align technology choices with application requirements and account for them in design, sourcing and manufacturing planning.
Mike Carano, industry intelligence consultant at the Global Electronics Association, said: “Wide-bandgap power technologies have moved beyond a specialized engineering conversation. They are now a business and supply-chain consideration for companies across the electronics ecosystem. As demand grows for more efficient and higher-performing electronic systems, it is essential that designers, manufacturers and sourcing teams understand not only where these technologies are being adopted, but also what their use means for production capability, reliability and supply continuity.”
The research also highlights collaboration across the electronics value chain, with implications for board design, materials, fabrication processes, thermal management, component availability and end-product reliability. It is the first in a planned joint white paper series examining technology and market developments relevant to electronics manufacturers, designers, suppliers and customers worldwide.
The findings appear in “SiC and GaN Power Devices Are Expanding — What the Parts Data (and the Fab Floor) Tell Us,” authored by Greg Jaknunas of Accuris and Mike Carano of the Global Electronics Association. The full report is available at https://www.electronics.org/galliumsilicon-carbide-white-paper.
