Kioxia and Sandisk have unveiled a new 9th-generation, high-performance 2Tb QLC 3D flash memory technology, designed to support the growing storage needs of AI-driven infrastructure. QLC, short for quad-level cell, is a type of flash memory that stores more data per memory cell than earlier generations, allowing for higher storage density. The companies frame this new technology as an example of how architectural improvements can help storage keep pace with the fast-moving demands of AI workloads, while also supporting more cost-efficient manufacturing.
The new memory builds on Kioxia and Sandisk's CMOS directly Bonded to Array (CBA) architecture, a manufacturing approach where the CMOS wafer, which handles logic and control circuitry, and the memory-array wafer, which stores the actual data, are each manufactured separately under optimized conditions and then bonded together afterward. By combining an advanced CMOS wafer with a proven memory-array platform, along with additional design and device improvements, the companies say the new technology delivers better performance while enabling faster rollout of advanced storage solutions for cloud computing and other data-intensive applications. Compared to the previous 8th-generation 2Tb QLC memory, the new version offers higher write and read bandwidth thanks to a 6-plane architecture, along with better power efficiency for both reading and writing data. It also achieves a NAND interface speed of 4.8Gb/s, a 33% improvement over the prior generation.
Hideshi Miyajima, chief technology officer at Kioxia, said AI continues to underpin broader technological progress, with applications expanding from generative AI into agent-based and physical AI, while the ways data gets used keep growing more diverse and sophisticated. He said that by combining Kioxia's proven memory cell technology with the latest CMOS technology, the company is speeding up development of its 9th-generation flash memory, an approach that lets it deliver strong performance while keeping investment costs relatively contained.
Alper Ilkbahar, chief technology officer at Sandisk, said the rapid adoption of AI is accelerating how quickly storage interfaces need to evolve, creating demand for memory technologies that can advance faster than in previous technology cycles. He said the new 9th-generation QLC technology demonstrates the flexibility that comes with the CBA architecture, since it allows CMOS and memory technology to be advanced independently of each other, letting the companies bring new capabilities to market more quickly and with better capital efficiency.
The introduction of this 9th-generation QLC 3D flash memory technology marks a notable step forward in the broader 3D flash memory roadmap and reflects the continued strength of the ongoing partnership between Kioxia and Sandisk. By making full use of the flexibility their CBA platform offers, the two companies say they're creating new opportunities for innovation in NAND flash memory and helping customers manage the growing storage demands of the AI era.
