SK hynix Inc. announced the development of a UFS 4.1 solution incorporating its 321-layer 1Tb triple-level cell 4D NAND flash, designed for mobile applications such as smart phones. The product is tailored for on-device AI, addressing the growing need for high performance and low power consumption in flagship smartphones.
The UFS 4.1 solution offers a 7% improvement in power efficiency compared to the previous generation, which used 238-layer NAND. It features a reduced thickness of 0.85mm, down from 1mm, to accommodate ultra-slim smartphone designs. The product achieves a data transfer speed of 4300MB/s for sequential read, the highest for a fourth-generation UFS. It also improves random read and write speeds by 15% and 40%, respectively, enhancing multitasking capabilities and application responsiveness for on-device AI tasks.
SK hynix plans to secure customer qualification within 2025 and begin volume shipments in the first quarter of 2026. The UFS 4.1 will be available in 512GB and 1TB capacities. Additionally, the company aims to complete development of a 321-layer 4D NAND-based SSD for consumer and data center applications by the end of 2025, expanding its portfolio in the NAND market.
