Navitas announces the launch of its groundbreaking 650 V and 1200 V trench-assisted planar SiC MOSFETs. These innovative devices, housed in the HV-T2PaK top-side cooled package, set a new industry benchmark for reliability and performance in automotive and industrial applications.
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Navitas HV-T2PaK SiC MOSFETs offer unprecedented system-level power density and efficiency, enhanced thermal management, and simplified board-level design and manufacturability. The package features the industry’s highest creepage of 6.45 mm, ensuring IEC-compliance for applications up to 1200V. Target applications include EV on-board chargers & DC-DC converters, data-center power supplies, residential solar inverters & energy storage systems, EV DC fast chargers, and HVAC motor drives.
Navitas has set a new standard with its AEC-Plus qualification, surpassing the existing AEC-Q101 and JEDEC product qualification standards. This new benchmark includes rigorous multi-lot testing and qualification, dynamic reverse bias & dynamic gate switching , over 2x longer power & temperature cycling, and over 3x longer duration for static high-temperature, high-voltage tests. Additionally, the 200°C TJMAX qualification ensures overload operation capability.
The HV-T2PaK package, with its compact 14 mm x 18.5 mm form factor, features an innovative groove design that extends creepage to 6.45 mm without reducing the size of the exposed thermal pad. The nickel, nickel-phosphorus plating on the thermal pad ensures optimal heat dissipation and reliable attachment to the thermal interface material.
Navitas GeneSiC trench-assisted planar SiC MOSFET technology offers up to 20% lower on-resistance under high temperatures compared to competitors, resulting in the lowest power losses across a wider operating range. These MOSFETs also boast the highest-published 100%-tested avalanche capability, excellent short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
For more information, visit www.navitassemi.com.
