Compound Semiconductor

Navitas launches advanced SiCPAK power modules with Epoxy-Resin potting for superior high-temperature performance and reliability

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Navitas announces the release of its latest SiCPAK power modules. These cutting-edge modules, featuring advanced epoxy-resin potting technology, set a new standard for reliability and efficiency in high-temperature environments.

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The new 1200V SiCPAK power modules are designed to excel in demanding high-power applications, including EV DC fast chargers, industrial motor drives, solar inverters, and energy storage systems. The innovative epoxy-resin potting technology significantly reduces thermal resistance shift, ensuring extended system lifetime and stable thermal performance even in high-humidity conditions.
 
Key Features and Benefits:
    Advanced Epoxy-Resin Potting Technology: Provides 5x lower thermal resistance increase after 1000 cycles of thermal shock testing (-40°C to +125°C) compared to conventional silicone-gel-filled modules.
 
    Trench-Assisted Planar SiC MOSFET Technology: Delivers up to 20% lower losses, cooler operation, and superior robustness, supporting long-term system reliability.
 
    High Reliability: Maintains acceptable isolation levels in rigorous testing, outperforming silicone-gel-filled modules.
 
    Versatile Configurations: Available in half-bridge, full-bridge, and 3L-T-NPC circuit configurations with built-in NTC thermistors.
 
    Ease of Integration: Pin-to-pin compatible with industry-standard press-fit modules and optional pre-applied Thermal Interface Material for simplified assembly.

The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across a wider operating range and offers up to 20% lower RDS(ON) under in-circuit operation at high temperatures compared to competition. Additionally, all GeneSiC SiC MOSFETs have the highest-published 100%-tested avalanche capability, up to 30% better short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.

The 1200V SiCPAK power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules.

For more information, please visit https://navitassemi.com

 


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