ROHM announced development of 650V GaN HEMTs in the TOLL (TO-LeadLess) package, which is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems.
The new GNP2070TD-Z feature compact design with improved heat dissipation, high current capacity, and better switching performance. ROHM outsourced package manufacturing to ATX SEMICONDUCTOR. ROHM is already mass producing its 650V GaN HEMTs in DFN8080 package, including power stage ICs that combine a gate driver and 650V GaN HEMT in a single package.
The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.
For mass production of these products, ROHM said the front-end processes are carried out by TSMC. Back-end processes are handled by ATX. On top, ROHM plans to partner with ATX to produce automotive-grade GaN devices.
In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.
Liao Hongchang, Director and General Manager, ATX said “We are extremely pleased to have been entrusted with production by ROHM, a company renowned for its advanced manufacturing technologies and in-house production facilities that cover everything from wafer fabrication to packaging. We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate on ROHM’s ongoing development of automotive-grade GaN devices. By strengthening our partnership, we aim to contribute to energy conservation across various industries and the realization of a sustainable society.”
Satoshi Fujitani, General Manager, AP Production Headquarters added “We are delighted to have successfully produced 650V GaN HEMTs in the TOLL package, achieving sufficient performance. ROHM not only offers standalone GaN devices but also provides power solutions that combine them with ICs, leveraging ROHM’s expertise in analog technology. The knowledge and philosophy cultivated in the design of these products are also applied to device development. Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market. Going forward, we will continue to enhance the performance of GaN devices to promote greater miniaturization and efficiency in a variety of applications, contributing to enrich people's lives.”
Application Examples
Power supply for servers, communication base stations, industrial equipment and more.
AC adapters (USB chargers), PV inverters, ESS (Energy Storage System).
In a wide range of power supply systems with output power of 500W to 1kW class can be installed.
Souce: ROHM
