onsemi has announced the Elite Pairing Studio, an online design tool for pairing silicon carbide (SiC) MOSFETs and gate drivers in power electronics applications. The tool targets AI data centers, electric vehicles, and industrial systems. It enables engineers to evaluate device-level behavior and pairing trade-offs early in the design process.
The Elite Pairing Studio provides a private, secure workspace on onsemi.com. Users follow a step-by-step workflow to input requirements and receive recommended combinations of onsemi gate drivers and SiC MOSFETs. The tool analyzes pairings using established industry equations and real-world performance calculations.
Key parameters displayed for each pairing include:
- Switching timings
- Gate voltage and current (V/I) waveforms
- Voltage overshoot margins relative to device ratings
- Switching energy losses, including turn-on and turn-off energy
An interactive waveform viewer allows comparison of trade-offs related to efficiency, electromagnetic interference behavior, and reliability margins.
The tool accelerates development by supporting evaluation of switching behavior, losses, and trade-offs before full system-level analysis, thereby reducing design iterations. It serves as the entry point to onsemi’s broader simulation tools, with Studio-generated PLECS system-level models available for use in the onsemi Elite Power Simulator to assess efficiency, thermal, and loss performance.
Additional onsemi technologies will be added to the Elite Pairing Studio in the future.
The onsemi Elite Pairing Studio is available now through the onsemi website. It is demonstrated at the onsemi booth (Hall 9-332) at PCIM Expo 2026 in Nuremberg, Germany.
