Michael Zhang, Head of DC Product Line at Great Wall Power, expressed enthusiasm about the partnership: "With its faster switching frequency and higher efficiency, GaN has become a key factor in unlocking the next generation of power supplies. We are very pleased to collaborate with Navitas, an industry leader in GaN technology, to enable this industry-leading ultra-high-power density and ultra-high efficiency DC-DC converter."
This ultra-high power density DC-DC converter is powered by Navitas’ GaNSense NV6169. The 650V, 45 mΩ, delivers 50% more power than prior designs, in an industry-standard, low-profile, low-inductance, 8 x 8 mm PQFN package for high-efficiency, high-density power systems. GaNFast power ICs with GaNSense technology feature GaN-industry-first features such as loss-less current sensing and the world’s fastest short-circuit protection, with a ‘detect-to-protect’ speed of only 30 ns, 6x faster than discrete solutions.
Unlike competing solutions, NV6169 is rated at 650V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly integrated power IC, the GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-discharge specification of 2 kV.
Charles Zha, SVP and GM of Navitas Asia-Pacific, added, "Navitas is deeply honored to cooperate with Great Wall Power to create this ultra-high-power density 2.5kW DC-DC converter. This collaboration showcases the advantages of our GaNFast power ICs and underscores our commitment to driving innovation in power supply technology."
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