Toshiba Launches 80V N-Channel Power MOSFET Built on Newest Process for AI Data Center Efficiency

Toshiba Electronic Devices & Storage Corporation has introduced the TPM1R408RH, an 80V N-channel power MOSFET built on U-MOS11-H, the company's newest process generation. The device is aimed at switched-mode power supplies used in industrial equipment for AI data centers and communications base stations, with shipments beginning immediately.

The rapid growth of AI processing has driven up power demand in data centers, while ongoing upgrades to communications infrastructure are pushing power supply designs to become more efficient, more compact (higher power density), and lower in electromagnetic interference. Since power losses directly influence system power consumption, heat output, and cooling requirements, choosing power semiconductors that balance conduction and switching losses effectively has become increasingly important, along with supporting broader system-level goals like EMI control, thermal management, and easier mounting.

The TPM1R408RH is built around an optimized device structure that brings drain-source On-resistance down to a maximum of 1.4mΩ, roughly 26% lower than Toshiba's earlier 80V part, the TPM1R908QM, which used the previous-generation U...