Mitsubishi Electric Corporation announced it will begin sequentially shipping samples in late June of two types of new 5th-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) in bare die form.
The devices are designed for use in inverters for drive motors and eAxles of electric vehicles (EVs), plug-in hybrid electric vehicles (PHEVs), and other electrified vehicles (xEVs). They feature Mitsubishi Electric’s proprietary trench structure and achieve approximately 25% lower on-resistance compared to existing 4th-generation trench SiC-MOSFET products with the same rated voltage and adjusted threshold voltage.
The new SiC-MOSFET bare dies are scheduled to be displayed at PCIM Expo & Conference 2026, taking place June 9-11 in Nuremberg, Germany, as well as at exhibitions in Japan, China, and other countries.
According to the company, the 5th-generation devices will support performance and miniaturization of xEV inverters and eAxles. Mitsubishi Electric’s proprietary manufacturing process technology suppresses performance degradation and fluctuations in power loss and on-resistance, supporting stable quality after long-term use.
