Alpha and Omega Semiconductor has released two state-of-the-art surface mounting package options for its industry-leading high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK and GLPAK packages will first be available on AOS’ AOGT66909 and AOGL66901 MOSFETs respectively. Combining AOS-proven robust MOSFET technology with advanced packaging know-how, these devices provide low ohmic and high current capabilities, critical to reducing the number of parallel MOSFETs needed in high current designs such as in next-generation e-mobility and industrial applications.
GTPAK Package:
Topside Cooling: The GTPAK package, available with the AOGT66909 MOSFET, features topside cooling technology with a large exposed pad for efficient heat transfer. This design allows heat to be transferred to a heat sink mounted on the top pad, providing better thermal dissipation and enabling the use of lower-cost PCBs like FR4.
GLPAK Package:
Gull-Wing Design: The GLPAK package, offered with the AOGL66901 MOSFET, is a gull-wing version of AOS’ TOLL package. It uses advanced clip technology to achieve a high inrush current rating and offers low package resistance and parasitic inductance, improving EMI performance compared to standard wire bonding.
Key Features:
Gull-Wing Leads: Both packages feature gull-wing leads for excellent solder joint reliability, even for insulated metal substrates applications. This design also enhances thermal cycling for IMS boards and other critical applications requiring high reliability.
Manufacturing Standards: AOS MOSFETs in these packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection manufacturing requirements.
The AOGT66909 MOSFET in the GTPAK package has a VDS of 100V, VGS of ±20V, and a maximum junction temperature (TJ) of 175°C. It offers a continuous drain current of 366A at 25°C and 258A at 100°C, with a pulsed drain current of 1464A at 25°C and an RDS(ON) max of 1.5 mOhms at 10V. The AOGL66901 MOSFET in the GLPAK package also has a VDS of 100V, VGS of ±20V, and a maximum junction temperature (TJ) of 175°C. It provides a continuous drain current of 448A at 25°C and 316A at 100°C, with a pulsed drain current of 1790A at 25°C and an RDS(ON) max of 1.25 mOhms at 10V .
