Alpha and Omega Semiconductor Introduces αMOS E2 600V Super Junction MOSFETs

Alpha and Omega Semiconductor (AOS) has released two new αMOS E2 600V Super Junction MOSFETs, the AOGT037V60DE2 and AOGT060V60DE2, both top-side cooled high-voltage transistors designed to deliver the power density and durability needed for high-performance power systems and solar inverters.

AOS built its new αMOS E2 high-voltage MOSFET platform to meet growing demand for better efficiency and greater power density management. These 600V Super Junction MOSFETs, a design that improves how efficiently the transistor can switch and handle voltage, are intended to perform well across a wide range of higher-voltage applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems.

Users of the latest high-performance switch-mode power supplies (SMPS) and solar inverters expect higher efficiency, greater power density, lower system cost, and reliable performance without compromise. AOS designed the advanced features in these top-side-cooled, high-voltage Super Junction MOSFETs specifically to meet those needs, and the devices also meet requirements across several common circuit topologies, including boost power factor correction (PFC), totem-pole PFC, LLC resonant converters, phase-shifted full bridge (PSFB) converters, and cyclo-converters.

AOS's αMOS E2 platform features strong body-diode ruggedness, rated at a di/dt of 1,500 A/µs (a measure of how quickly current can change without damaging the device), along with strong avalanche capability, meaning the ability to survive brief overvoltage events, and solid short-circuit withstand time. This enhanced durability translates into higher system-level reliability, helping ensure the device continues operating safely even under abnormal conditions. AOS also pairs this αMOS E2 silicon with its top-side-cooled GTPAK package, which maximizes heat dissipation through a cooling pad on top of the device rather than underneath it. As a result, system designers can better manage heat dissipation while reclaiming circuit board space that would otherwise be needed for cooling, helping maximize overall power density. By optimizing both the electrical performance and the thermal design together, AOS says system performance and long-term reliability are both significantly improved.

Simon Yu, senior manager of the high-voltage product line at AOS, said the company's top-side-cooled GTPAK products, including the AOGT037V60DE2 and AOGT060V60DE2, are engineered to meet the demands of high-performance AC/DC power supplies, DC/DC converters, and DC/AC solar inverters. He said electromagnetic interference (EMI) and density limitations tied to traditional bottom-side cooling designs have long been a major engineering obstacle, and that AOS's top-side-cooled αMOS E2 solutions give designers a strong option for mid-to-high-power systems, supporting performance-driven power infrastructure, power supply units, and renewable energy systems.

On specifications, the top-side-cooled package maximizes power density by optimizing both the electrical and thermal paths together. Gull-wing leads provide strong board-level reliability in mission-critical environments. A robust, built-in fast body diode reduces reverse recovery charge (Qrr), improving performance in high-stress applications. The devices offer enhanced durability through strong avalanche capability, inrush current handling, and a wide safe operating area (SOA). They're also designed to prevent unwanted self-turn-on, helping ensure reliable operation under dynamic conditions, and are suited for boost PFC, totem-pole PFC, LLC, PSFB, and CrCM H-4/cyclo inverter applications.

The AOGT037V60DE2 (600V, 37 mΩ) and AOGT060V60DE2 (600V, 60 mΩ), both in top-side-cooled GTPAK packages, are now available in production quantities with a lead time of 16 weeks. Unit pricing for 1,000-piece quantities is $6.00 and $3.00, respectively.