Vishay Intertechnology introduces 80 V MOSFET in powerPAK 8x8SW package with 0.88 mW on-resistance

Vishay  announced the release of an 80 V TrenchFET Gen IV n-channel power MOSFET, the SiEH4800EW, in the PowerPAK 8x8SW bond wireless package. The MOSFET has an on-resistance of 0.88 mW at 10 V, which is 15% lower than competing devices in the same footprint, and a thermal resistance (RthJC) of 0.36 °C/W, reduced by 18% compared to similar devices.

The device measures 8 mm by 8 mm with a 1 mm profile, occupying 50% less PCB space than MOSFETs in the TO-263 package. It features a fused lead design, increasing the source PAD solderable area to 3.35 mm², four times larger than a traditional PIN solder area, which lowers current density between the MOSFET and PCB to reduce electro-migration risk. The MOSFET includes wettable flanks to improve solderability and facilitate visual inspection of solder joint reliability.
The SiEH4800EW is designed for synchronous rectification and OR-ing functionality, with applications in motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. It supports high-temperature operation up to +175 °C, and its bond wireless design reduces parasitic inductance while increasing current capability. The MOSFET is RoHS-compliant, halogen-free, and 100% tested for gate re...