Toshiba launches four 650V SiC MOSFETs in compact DFN8x8 package

Toshiba Electronic Devices & Storage Corporation has released four 650V silicon carbide (SiC) MOSFETs, named TW031V65C, TW054V65C, TW092V65C, and TW123V65C, using its 3rd generation SiC MOSFET chips. These devices are housed in a DFN8x8 surface-mount package and are designed for industrial applications, including switched-mode power supplies, power conditioners for photovoltaic generators, EV charging stations, uninterruptible power supplies, and equipment in servers, data centers, and communications systems. Volume shipments began on May 20, 2025.

The DFN8x8 package reduces volume by over 90% compared to lead-inserted packages like TO-247 and TO-247-4L(X), enabling higher power density in equipment. Its surface-mount design uses smaller parasitic impedance components, such as resistance and inductance, reducing switching losses. The 4-pin DFN8x8 package includes a Kelvin connection for the gate drive signal source terminal, minimizing the impact of source wire inductance. For the TW054V65C, this results in approximately 55% lower turn-on loss and 25% lower turn-off loss compared to Toshiba’s 650V 3rd generation SiC MOSFET in a TO-247 package without Kelvin connection.
Key features include low switching loss, optimized temperature dependence of drain-source On-resi...