JEDEC Solid State Technology Association announced the publication of two new documents developed by its JC-70.2 Silicon Carbide Subcommittee: JEP203 and JEP204.
JEP203: Guideline for Short Circuit Evaluation in Power Conversion Transistors provides guidance for evaluating short-circuit capability of power MOSFETs. It aims to help engineers improve protection design, testing consistency, and system robustness in applications such as electric vehicles, industrial drives, and energy infrastructure.
JEP204: Catalog of Stress Procedures for Silicon Carbide Devices for Power Electronic Conversion serves as a comprehensive reference covering reliability, environmental, and ruggedness stress procedures for SiC power devices. It offers a common framework for qualification engineers and device manufacturers to evaluate long-term reliability and performance.
Both documents are available for free download from the JEDEC website and are intended to support the growing adoption of SiC power semiconductors.
“JEP203 and JEP204 are landmark guidelines for SiC power conversion, enabling the industry to confidently adopt silicon carbide in demanding power electronic applications,” said Dr. Donald Gajewski, Wolfspeed Senior Director Reliability Engineering, and chair of the 702_1 Task Group.
“As the power electronics industry accelerates its transition to silicon carbide, standardization is the catalyst for confidence and scale,” said Dr. Thomas Aichinger, Senior Principal Engineer, SiC Technology Development, Infineon Technologies, and vice-chair of the JC-70.2 subcommittee.
