Samsung Electronics and Advanced Micro Devices (AMD) signed a Memorandum of Understanding (MOU) on March 18, 2026, to expand their collaboration on AI memory and computing technologies. The signing took place at Samsung’s chip manufacturing complex in Pyeongtaek, South Korea, with AMD Chair and CEO Dr. Lisa Su and Samsung Electronics Vice Chairman & CEO Young Hyun Jun in attendance.
The agreement focuses on Samsung serving as the primary supplier of HBM4 memory for AMD’s upcoming Instinct MI455X GPU, an AI accelerator. It also covers advanced DRAM solutions, including next-generation DDR5 memory, for the 6th Generation AMD EPYC processors (codenamed “Venice”). These components will support systems that integrate AMD Instinct GPUs, EPYC CPUs, and rack-scale architectures such as the AMD Helios platform.
Samsung’s HBM4 uses its 6th-generation 10nm-class DRAM process (1c) with a 4nm logic base die. It supports processing speeds up to 13 Gbps and maximum bandwidth of 3.3 TB/s per stack, which the company states exceeds current industry standards. The MI455X GPU, incorporating this HBM4, is positioned for AI model training and inference workloads.
The companies are also discussing potential foundry partnerships, under which Samsung could provide manufacturing services for future AMD products.
Samsung and AMD have collaborated for nearly two decades on graphics, mobile, and computing technologies. Samsung previously supplied HBM3E memory for AMD’s Instinct MI350X and MI355X accelerators.
Dr. Lisa Su toured Samsung’s advanced semiconductor production line during the visit.
