Kioxia and SanDisk Activate Fab2 for AI-Driven 3D Flash Memory Production in Japan

Kioxia and SanDisk announced the commencement of operations at Fab2 (K2), a new semiconductor fabrication facility at the Kitakami Plant in Iwate Prefecture, Japan. The facility is equipped to produce eighth-generation, 218-layer 3D flash memory using CMOS directly Bonded to Array (CBA) technology, along with future advanced 3D flash memory nodes, to address increasing storage demands from AI applications.

Production at Fab2 will scale up gradually in accordance with market conditions, with significant output anticipated in the first half of 2026. The facility incorporates an earthquake-absorbing structure, energy-efficient manufacturing equipment, and artificial intelligence for production optimization. Its space-efficient design maximizes clean room area for equipment. Part of the investment for Fab2 is subsidized by the Japanese government under a plan approved in February 2024.

Koichiro Shibayama, President and CEO of Kioxia Iwate Corporation, which manages the Kitakami Plant, stated, “We are pleased to start operations of our new Fab2 facility at Kitakami Plant. The eighth and further generation 3D flash memory products produced at Fab2 will offer new value for rapidly emerging AI market. We will continue to leverage our p...