2025 Device Research Conference to showcase advances in semiconductor device technology

The 83rd Device Research Conference (DRC), the longest-running semiconductor device research meeting globally, will take place from June 22-25, 2025, at Duke University in Durham, NC. The conference serves as an international forum for presenting semiconductor device research, covering areas such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices, while fostering the development of future semiconductor device engineers.
The DRC 2025 program includes three plenary sessions, six keynotes, and over 40 invited speakers addressing various semiconductor device-related topics. Oral and poster sessions will feature research, alongside an evening panel discussion and three student awards sessions. Highlighted papers include:
Atomistic simulations of failure mechanisms in ultrascaled HfOx RRM arrays (ETH Zurich)
Sub-nanosecond ferroelectric polarization dynamics in HZO FeCAP (Technion)
Multi-fin β-Ga2O3 vertical FinFET with a breakdown voltage of 1.8kV and a power figure of merit of 1GW/cm2 (UCSB)
Overcoming mobility-stability trade-off via gate stack engineering in BEOL-compatible Ga-doped In2O3 MOSFETs (Georgia Tech)
A complementary 2D material-based one instruction set computer (Penn State)
Accumulation and relaxation of single-domain polarization in nanoscale ferroelectric-gate metal-oxide transistors (MIT)