IISc Researchers harness hidden power of defects: Impact ionization in 2D transition metal dichalcogenide FETs

The development of high-performance, reliable, and robust electronic devices necessitates a fundamental understanding of hot carrier dynamics, high field transport, and electrical breakdown mechanisms in transition metal dichalcogenide field-effect transistors. In an article published in Nature, researchers from the Department of Electronic Systems Engineering (dESE) and MSDLab at IISc, Bangalore have made significant strides in this area.

 This study delves into the impact ionization in MoS2, mediated via defect-induced trap states, and explores the paradoxical role of defects in these processes.