Samsung Begins Shipping Industry-First HBM4E Samples for AI Memory Applications

Samsung Electronics has started shipping samples of its 12-layer HBM4E high-bandwidth memory to major global customers. The HBM4E follows the company’s earlier mass production and commercial shipment of HBM4 this year. It extends Samsung’s HBM roadmap to meet demands of AI computing and hyperscale infrastructure.

The 12-layer HBM4E delivers a stable pin speed of 14 Gbps, scalable up to 16 Gbps. This represents more than a 20% increase over HBM4. It provides memory bandwidth of up to 3.6 TB/s per stack.

The new memory is offered in a 48 GB capacity configuration, more than a 30% increase over the previous generation. Samsung plans to expand the lineup to include 32 GB (8-layer) and 64 GB (16-layer) versions according to customer requirements.

Samsung’s HBM4E uses the industry’s most advanced 6th-generation 10-nanometer (nm)-class DRAM process (1c) and Samsung Foundry’s 4nm logic base die. These technologies, refined through HBM4 production, support enhanced process stability and manufacturability.

Design and process optimizations across memory and logic architectures have resulted in a 16% improvement in energy efficiency and more than a 14% improvement in thermal resistance characteri...