STMicroelectronics has added new 700V PowerGaN devices to its STPOWER portfolio. The gallium nitride (GaN) power semiconductors are designed to improve energy efficiency and power density in high-demand applications including AI servers, robotics, industrial systems, and advanced consumer products such as home appliances.
The seven new GaN enhancement-mode transistors (HEMTs) support reliable high-power operation and higher-frequency topologies. They feature low conduction losses, very low switching loss at high frequencies, and zero reverse-recovery charge.
The devices cover continuous current ratings from 6 A to 29 A and typical RDS(on) values from 53 mΩ to 270 mΩ. They also offer ultra-low internal capacitances and low gate charge, with a Qg x RDS(on) figure of merit ahead of traditional silicon devices.
The transistors are housed in DPAK, TO-LL, and PowerFLAT surface-mount packages. Specific models include:
- SGT350R70GTK (6 A, 270 mΩ) in DPAK
- SGT070R70HTO (26 A, 53 mΩ) in TO-LL
- SGT080R70ILB (29 A, 60 mΩ), SGT105R70ILB (21.7 A, 80 mΩ), SGT140R70ILB (17 A, 106 mΩ), SGT190R70ILB (11.5 A, 138 mΩ), SGT240R70ILB (10 A, 165 mΩ) in PowerFLAT 8×8
TO-LL and PowerFLAT packages include a Kelvin source connection for improved noise immunity. The devices can replace MOSFETs in existing circuits or enable new higher-frequency topologies, reducing the size of magnetics and passives.
“Broadening our PowerGaN portfolio with new 700V devices extends the benefits of gallium-nitride technology into medium-power and high-power applications,” said Mario Aleo, Executive Vice President, Power & Discrete Sub-Group, STMicroelectronics.
The new 700V PowerGaN transistors are in production now and available from the eSTore or through distributors. Pricing ranges from $0.63 to $2.25 for orders of 1000 pieces.
