Everspin Launches UNISYST MRAM Family as Unified Code-and-Data Memory for Edge AI and Mission-Critical Systems

Everspin Technologies announced the UNISYST MRAM family, a new generation of unified memory that combines code storage and data memory in a high-density, non-volatile architecture. UNISYST extends Everspin’s PERSYST MRAM platform to higher densities and serves as a migration path from serial MRAM devices to unified code-and-data MRAM without requiring changes to system architecture or software.

The family will initially offer densities from 128 megabits to 2 gigabits, using a standard xSPI interface operating up to octal SPI at 200MHz. Devices are planned to feature AEC-Q100 Grade 1 qualification and minimum 10-year data retention at extreme temperatures.

UNISYST provides read bandwidth up to 400 MB/s and write bandwidth of approximately 90 MB/s, over 400 times faster than NOR flash. Write endurance is up to 10 times higher than typical NOR flash.

The architecture supports fast boot, rapid updates, and predictable performance without the tradeoffs of traditional flash-based designs. It enables software-defined systems that require frequent reconfiguration while maintaining data integrity across power cycles.

Sanjeev Aggarwal, president and CEO of Everspin Technologies, stated that system designers face limits of NOR flash below 40 nanometers and with demanding workloads, and UNISYST extends the MRAM roadmap to higher densities while allowing...