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Discrete

iDEAL Semiconductor Expands SuperQ 200V MOSFET Portfolio with Industry-Lowest RDS(on) in TOLL and TO-220 Packages

iDEAL Semiconductor announced the expansion of its SuperQ 200V MOSFET portfolio, delivering industry-leading on-resistance across widely used power semiconductor packages.

The iS20M5R5S1T achieves a maximum RDS(on) of 5.5 mΩ in the TOLL package, setting a benchmark as the lowest RDS(on) 200V MOSFET in that package.

The iS20M6R3S1P delivers a maximum RDS(on) of 6.3 mΩ in the TO-220 package, providing the lowest RDS(on) for a 200V MOSFET in that package.

These devices offer efficiency and flexibility for surface-mount and through-hole power designs, enabling higher power density and reduced conduction losses in space-constrained applications, as well as best-in-class efficiency in designs favoring through-hole assembly, mechanical mounting, or direct heatsinking.

Later in 2026, iDEAL plans to extend the 200V, 5.5 mΩ SuperQ performance into additional packages:
- D2PAK-7L (iS20M5R5S1H), optimized for high-current surface-mount designs with enhanced thermal and mechanical robustness
- TOLT (iS20M5R5S1TC), optimized for ultra-compact, high-power-density layouts with top-side cooling capability

The SuperQ 200V devices target demanding motor-drive applications, where efficiency, robustness, and fault tolerance are critical. Key features for motor drive designs include:
- Industry-leading short-circuit withstand current (...

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