Navitas Semiconductor announced the introduction of a 10 kW DC-DC power platform designed for next-generation AI data centers using 800 VDC architectures.The platform achieves 98.5% peak efficiency and 98.1% efficiency at full load, with a switching frequency of 1 MHz. It uses 650 V and 100 V GaNFast gallium nitride (GaN) FETs in a three-level half-bridge architecture with synchronous rectification. The design is housed in a full-brick package measuring 61 × 116 × 11 mm, delivering a power density of 2.1 kW/in³.
The production-oriented platform supports 800 V to 50 V and +/-400 V to 50 V conversion at 10 kW. It integrates auxiliary power and control functions to facilitate adoption and enable high-power-density module designs for HVDC AI data centers. The company references a whitepaper on "Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure."
Chris Allexandre, President and CEO of Navitas Semiconductor, stated that the platform supports the transition to HVDC data center power infrastructure to address future power requirements for AI workloads, which are expected to demand significantly more compute per query.
The 10 kW DC-DC platform is under evaluation by key data center customers through collaborative development. It is scheduled to be displayed at the Navitas booth (#2027) at the Applied Power Electronics Conference (APEC), taking place March 22–26, 2026, in San Antonio, TX.
